Introduction:This on-line seminar explores the increasing importance of Ultra-Fast Current-Voltage (I-V) characterization across a broad spectrum of device and process technologies. Common applications include non-volatile memory devices (NVM) such as Flash and phase change memory, isothermal characterization on silicon-on-insulator (SOI) devices and compound semiconductors, and transient characteristics of new materials such as high-K dielectrics.
Fundamentals of Ultra-Fast I-V Device Characterization will cover a core description of the measurement hardware and setups, including cabling to a probe station. It will also discuss typical test setups and common error sources. Finally, some practical examples of device measurements will be given.
Target Audience:
Students, researchers, and engineers doing characterization of materials, processes, and devices
Lab managers wanting to learn about this useful measurement technique
Engineers doing device and material reliability studies (WLR, ESD, latchup, etc.)

Introduction:This seminar is designed to introduce the topic of C-V measurements as they relate to semiconductor device and materials characterization. C-V testing is commonly used to determine semiconductor parameters such as doping profiles, density of interface states, threshold voltages, oxide charge, and carrier lifetime.
Those participating in this seminar will learn:
1. What is C-V testing?
2. For what types of devices can C-V testing be used to characterize?
3. Who can use C-V?
4. C-V measurement challenges
Target Audience
Engineers new to semiconductor materials and device testing, process and device engineers who would like to refresh their knowledge of this testing methodology, characterization lab managers.

Introduction:This seminar describes the basics of low current (from nA to fA) electrical measurements, including how to select the right current measurement instrument, practical ways to reduce current noise in measurement setups, and how to quantify subtle sources of noise. These measurement best practices are important for applications in semiconductor material/device characterization, nanoscience test and measurement, optoelectronic device characterization, and many more. Application examples where such sensitive measurements are required will be discussed, together with a discussion of recent innovative test equipment solutions.
Participant Objectives:
By participating in this seminar, you will learn and understand:
1. Measurement techniques required for measuring very small currents
2. Sources of measurement error that will affect such low current measurements
3. Measurement solutions that can be used in low current measurement applications
Target Audience:
This seminar is recommended for students, researchers, engineers, and scientists in areas such as materials science, chemistry, nanoscience, and semiconductor device development who wish to get a better understanding of low current electrical measurements.

Introduction:Along with larger data communications capacity, and limited by BTS space, power density requirement in telecom power module has increased dramatically over the past few years. Half-bridge with secondary synchronous rectifier is an effective power topology to improve the power density. It can help minimize the transformer size, decrease the output inductor size and offer many advantages compared to active clamp topology. However, there are also challenges in designing with Half-bridge. This seminar will discuss the advantages of Half-bridge topology and provide solutions to the design issues.